Gate oxide

Results: 34



#Item
21Power electronics / Semiconductor devices / MOSFET / Field-effect transistor / Gate oxide / Threshold voltage / Silicon carbide / Insulated gate bipolar transistor / Polysilicon depletion effect / Electrical engineering / Electronic engineering / Technology

4H-SiC MOSFETs with High Channel Mobility by P-Doped Gate Oxide Assistant Prof. Hiroshi YANO (NAIST) 1. 4H-SiC MOSFET DC Transmission

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Source URL: www.jst.go.jp

Language: English - Date: 2012-11-19 02:09:11
22Threshold voltage / Introduction to quantum mechanics / Quantum Hall effect / Schrödinger equation / Gate oxide / Quantum tunnelling / Perturbation theory / Field electron emission / Physics / Quantum mechanics / MOSFET

Quantum Mechanical Effects Correction Models for Inversion Charge and Current-Voltage (I-V) Characteristics of the MOSFET Device H. Abebe* and E. Cumberbatch** Nanotech2003 1 *

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Source URL: www.cgu.edu

Language: English - Date: 2006-06-15 18:36:21
23Threshold voltage / MOSFET / Quantum electronics / Gate oxide / Quantum Hall effect / Field-effect transistor / Physics / Electrical engineering / Electromagnetism

Modeling Quantum Effects on MOSFET Channel Surface Potential Henok Abebe MOSIS service, USC Information Sciences Institute 4676 Admiralty Way, Marina del Rey, CA 90292, USA and Ellis Cumberbatch

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Source URL: www.cgu.edu

Language: English - Date: 2006-06-15 18:36:35
24Power electronics / Nitrides / MOSFET / Field-effect transistor / Gallium nitride / Transistor / Gate oxide / Threshold voltage / Insulated gate bipolar transistor / Chemistry / Electrical engineering / Semiconductor devices

Selected Novel Technologies for Licensing 2012 MRS Fall

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Source URL: www.jst.go.jp

Language: English - Date: 2013-11-29 00:56:28
25Technology / MOSFET / Threshold voltage / Multigate device / Transistor / Field-effect transistor / Gate oxide / Power MOSFET / Electrical engineering / Semiconductor devices / Electronic engineering

Abstract For the past 40 years, relentless focus on Moore’s Law transistor scaling has provided ever-increasing transistor performance and density. In order to continue the technology scaling beyond 22nm node, it is cl

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Source URL: etd.ncsi.iisc.ernet.in

Language: English - Date: 2014-07-18 03:11:59
26Semiconductor devices / Electronic design / Digital electronics / Logic families / MOSFET / Threshold voltage / Multigate device / Gate oxide / CMOS / Electronic engineering / Electrical engineering / Electromagnetism

Microsoft PowerPoint - EECScolloquium.oct11

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Source URL: www.eecs.berkeley.edu

Language: English - Date: 2011-10-17 13:47:30
27Computer memory / Electronics / Patent law / Patent infringement / Gate oxide / Electronic engineering

United States Court of Appeals for the Federal Circuit ______________________ KILOPASS TECHNOLOGY, INC., Plaintiff-Appellee,

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Source URL: www.cafc.uscourts.gov

Language: English - Date: 2013-12-26 10:46:51
28Charge carriers / SILC / Leakage / Computer memory / Non-volatile memory / Threshold voltage / Gate oxide / Electron / Floating Gate MOSFET / Electrical engineering / Physics / Electromagnetism

Statistical simulations of oxide leakage current in MOS transistor and Floating Gate memories Luca Larcher and Paolo Pavan [removed]

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Source URL: www.nsti.org

Language: English - Date: 2005-05-23 13:16:33
29Condensed matter physics / Emerging technologies / Nanomaterials / Graphene / Field-effect transistor / Electron mobility / Lead zirconate titanate / Ferroelectricity / Physics / Matter / Chemistry

High Mobility Graphene FETs with Ferroelectric Gate Oxide X. Hong, K. Zou, & J. Zhu, Physics Department, Penn State University, University Park, PA[removed]AFM image of nLG on a PZT substrate 1μm

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Source URL: www.mri.psu.edu

Language: English - Date: 2010-08-25 15:49:29
30Semiconductor devices / MOSFET / Electronic design / Threshold voltage / Field-effect transistor / Self-aligned gate / Depletion region / Gate oxide / Integrated circuits / Electronic engineering / Electrical engineering / Electromagnetism

Design of Ion-Implanted MOSFET’s with Very Small Physical Dimensions ROBERT H. DENNARD, MEMBER, IEEE, FRITZ H. GAENSSLEN, HWA-NIEN YU, MEMBER, IEEE,

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Source URL: www.ece.ucsb.edu

Language: English - Date: 2007-02-15 15:58:51
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